Ferroelectric RAM Market

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.

Ferroelectric RAM Market contains market size and forecasts of Ferroelectric RAM in global, including the following market information:

Global Ferroelectric RAM Market Revenue, 2017-2022, 2023-2028, ($ millions)

Global Ferroelectric RAM Market Sales, 2017-2022, 2023-2028, (M Units)

Global top five Ferroelectric RAM companies in 2021 (%)

The global Ferroelectric RAM market was valued at 280.9 million in 2021 and is projected to reach US$ 365.4 million by 2028, at a CAGR of 3.8% during the forecast period.

The U.S. Market is Estimated at $ Million in 2021, While China is Forecast to Reach $ Million by 2028.

Serial Memory Segment to Reach $ Million by 2028, with a % CAGR in next six years.

The global key manufacturers of Ferroelectric RAM include Cypress Semiconductor, Fujitsu, Texas Instruments, IBM and Infineon, etc. In 2021, the global top five players have a share approximately % in terms of revenue.

We surveyed the Ferroelectric RAM manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Total Market by Segment:

Global Ferroelectric RAM Market, by Type, 2017-2022, 2023-2028 ($ Millions) & (M Units)

Global Ferroelectric RAM Market Segment Percentages, by Type, 2021 (%)

Serial Memory

Parallel Memory

Others

Global Ferroelectric RAM Market, by Application, 2017-2022, 2023-2028 ($ Millions) & (M Units)

Global Ferroelectric RAM Market Segment Percentages, by Application, 2021 (%)

Smart Meters

Automotive Electronics

Medical Devices

Wearable Devices

Others

Global Ferroelectric RAM Market, By Region and Country, 2017-2022, 2023-2028 ($ Millions) & (M Units)

Global Ferroelectric RAM Market Segment Percentages, By Region and Country, 2021 (%)

North America

US

Canada

Mexico

Europe

Germany

France

U.K.

Italy

Russia

Nordic Countries

Benelux

Rest of Europe

Asia

China

Japan

South Korea

Southeast Asia

India

Rest of Asia

South America

Brazil

Argentina

Rest of South America

Middle East & Africa

Turkey

Israel

Saudi Arabia

UAE

Rest of Middle East & Africa

Competitor Analysis

The report also provides analysis of leading market participants including:

Key companies Ferroelectric RAM revenues in global market, 2017-2022 (Estimated), ($ millions)

Key companies Ferroelectric RAM revenues share in global market, 2021 (%)

Key companies Ferroelectric RAM sales in global market, 2017-2022 (Estimated), (M Units)

Key companies Ferroelectric RAM sales share in global market, 2021 (%)

Further, the report presents profiles of competitors in the market, key players include:

Cypress Semiconductor

Fujitsu

Texas Instruments

IBM

Infineon