Ferro-electric Random Access Memory Market

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

Ferro-electric Random Access Memory Market contains market size and forecasts of Ferro-electric Random Access Memory in global, including the following market information:

• Global Ferro-electric Random Access Memory Market Revenue, 2017-2022, 2023-2028, ($ millions)
• Global Ferro-electric Random Access Memory Market Sales, 2017-2022, 2023-2028, (K Units)
• Global top five Ferro-electric Random Access Memory companies in 2021 (%)

The global Ferro-electric Random Access Memory market was valued at 280.9 million in 2021 and is projected to reach US$ 363.5 million by 2028, at a CAGR of 3.8% during the forecast period.

The U.S. Market is Estimated at $ Million in 2021, While China is Forecast to Reach $ Million by 2028.

Serial Memory Segment to Reach $ Million by 2028, with a % CAGR in next six years.

The global key manufacturers of Ferro-electric Random Access Memory include Ramtron, Fujistu, TI, IBM and Infineon, etc. In 2021, the global top five players have a share approximately % in terms of revenue.

MARKET MONITOR GLOBAL, INC (MMG) has surveyed the Ferro-electric Random Access Memory manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Total Market by Segment:

Global Ferro-electric Random Access Memory Market, by Type, 2017-2022, 2023-2028 ($ Millions) & (K Units)

Global Ferro-electric Random Access Memory Market Segment Percentages, by Type, 2021 (%)

• Serial Memory
• Parallel Memory

Global Ferro-electric Random Access Memory Market, by Application, 2017-2022, 2023-2028 ($ Millions) & (K Units)

Global Ferro-electric Random Access Memory Market Segment Percentages, by Application, 2021 (%)

• Smart Meters
• Automotive Electronics
• Medical Devices
• Wearable Devices

Global Ferro-electric Random Access Memory Market, By Region and Country, 2017-2022, 2023-2028 ($ Millions) & (K Units)

Global Ferro-electric Random Access Memory Market Segment Percentages, By Region and Country, 2021 (%)

• North America
• US
• Canada
• Mexico
• Europe
• Germany
• France
• U.K.
• Italy
• Russia
• Nordic Countries
• Benelux
• Rest of Europe
• Asia
• China
• Japan
• South Korea
• Southeast Asia
• India
• Rest of Asia
• South America
• Brazil
• Argentina
• Rest of South America
• Middle East & Africa
• Turkey
• Israel
• Saudi Arabia
• UAE
• Rest of Middle East & Africa
• Competitor Analysis

The report also provides analysis of leading market participants including:

• Key companies Ferro-electric Random Access Memory revenues in global market, 2017-2022 (Estimated), ($ millions)
• Key companies Ferro-electric Random Access Memory revenues share in global market, 2021 (%)
• Key companies Ferro-electric Random Access Memory sales in global market, 2017-2022 (Estimated), (K Units)
• Key companies Ferro-electric Random Access Memory sales share in global market, 2021 (%)

Further, the report presents profiles of competitors in the market, key players include:

• Ramtron
• Fujistu
• TI
• IBM
• Infineon