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Download Free sampleThe power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.
Gallium Nitride and Silicon Carbide Power Semiconductors Market contains market size and forecasts of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors in Global, including the following market information:
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Revenue, 2017-2022, 2023-2028, ($ millions)
Global top five companies in 2021 (%)
The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market was valued at 1045.8 million in 2021 and is projected to reach US$ 8102 million by 2028, at a CAGR of 34.0% during the forecast period.
The U.S. Market is Estimated at $ Million in 2021, While China is Forecast to Reach $ Million by 2028.
Silicon Carbide Power Semiconductor Segment to Reach $ Million by 2028, with a % CAGR in next six years.
The global key manufacturers of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors include Infineon, CREE (Wolfspeed), Roma Semiconductor Group, STMicroelectronics, ON Semiconductor, Mitsubishi Electric, Fuji Electric, Littelfuse and Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd. and etc. In 2021, the global top five players have a share approximately % in terms of revenue.
We surveyed the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors companies, and industry experts on this industry, involving the revenue, demand, product type, recent developments and plans, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market, by Type, 2017-2022, 2023-2028 ($ millions)
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Segment Percentages, by Type, 2021 (%)
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market, by Application, 2017-2022, 2023-2028 ($ millions)
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Segment Percentages, by Application, 2021 (%)
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market, By Region and Country, 2017-2022, 2023-2028 ($ Millions)
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Segment Percentages, By Region and Country, 2021 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors revenues in global market, 2017-2022 (estimated), ($ millions)
Key companies Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors revenues share in global market, 2021 (%)
Further, the report presents profiles of competitors in the market, key players include:
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.
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