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Download Free sampleGaN Field-Effect Transistors is a type of field effect transistor based on gallium nitride and aluminum gallium nitride. Due to the good heat dissipation performance, high breakdown electric field and high saturation speed of GaN materials, GaN FETs have great application prospects in high-power high-frequency energy conversion and high-frequency microwave communication.
GaN Field-Effect Transistors Market aims to provide a comprehensive presentation of the global market for GaN Field-Effect Transistors, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN Field-Effect Transistors. GaN Field-Effect Transistors Market contains market size and forecasts of GaN Field-Effect Transistors in global, including the following market information:
Global GaN Field-Effect Transistors Market Revenue, 2018-2023, 2024-2029, ($ millions)
Global GaN Field-Effect Transistors Market Sales, 2018-2023, 2024-2029, (K Units)
Global top five GaN Field-Effect Transistors companies in 2022 (%)
The global GaN Field-Effect Transistors market was valued at US$ million in 2022 and is projected to reach US$ million by 2029, at a CAGR of % during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million.
HFET Segment to Reach $ Million by 2029, with a % CAGR in next six years.
The global key manufacturers of GaN Field-Effect Transistors include Infineon Technologies, Texas Instruments, Nexperia, Renesas Electronics, NXP, Transphorm, Panasonic Electronic, GaN Systems and EPC, etc. in 2022, the global top five players have a share approximately % in terms of revenue.
We surveyed the GaN Field-Effect Transistors manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global GaN Field-Effect Transistors Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global GaN Field-Effect Transistors Market Segment Percentages, by Type, 2022 (%)
HFET
MODFET
Others
Global GaN Field-Effect Transistors Market, by Application, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global GaN Field-Effect Transistors Market Segment Percentages, by Application, 2022 (%)
Consumer Electronics
Automotive
Communication
Charging Equipment
Others
Global GaN Field-Effect Transistors Market, By Region and Country, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global GaN Field-Effect Transistors Market Segment Percentages, By Region and Country, 2022 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies GaN Field-Effect Transistors revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies GaN Field-Effect Transistors revenues share in global market, 2022 (%)
Key companies GaN Field-Effect Transistors sales in global market, 2018-2023 (Estimated), (K Units)
Key companies GaN Field-Effect Transistors sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
Infineon Technologies
Texas Instruments
Nexperia
Renesas Electronics
NXP
Transphorm
Panasonic Electronic
GaN Systems
EPC
pSemi (Murata)
Toshiba
Qorvo
Outline of Major Chapters:
Chapter 1: Introduces the definition of GaN Field-Effect Transistors, market overview.
Chapter 2: Global GaN Field-Effect Transistors market size in revenue and volume.
Chapter 3: Detailed analysis of GaN Field-Effect Transistors manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of GaN Field-Effect Transistors in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global GaN Field-Effect Transistors capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.
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