High Power GaN Devices Market

The global High Power GaN Devices market was valued at US$ million in 2023 and is projected to reach US$ million by 2030, at a CAGR of % during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

The U.S. Market is Estimated at $ Million in 2023, While China is Forecast to Reach $ Million.

Transistors Segment to Reach $ Million by 2030, with a % CAGR in next six years.

The global key manufacturers of High Power GaN Devices include Infineon, Texas Instruments, Integra Technologies, Qorvo, Wolfspeed, Efficient Power Conversion, GaN Systems, Nexperia and STMicroelectronics, etc. in 2023, the global top five players have a share approximately % in terms of revenue.

High Power GaN Devices Market aims to provide a comprehensive presentation of the global market for High Power GaN Devices, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding High Power GaN Devices. High Power GaN Devices Market contains market size and forecasts of High Power GaN Devices in global, including the following market information:

Global High Power GaN Devices Market Revenue, 2019-2024, 2025-2030, ($ millions)

Global High Power GaN Devices Market Sales, 2019-2024, 2025-2030, (K Units)

Global top five High Power GaN Devices companies in 2023 (%)

We surveyed the High Power GaN Devices manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Total Market by Segment:

Global High Power GaN Devices Market, by Type, 2019-2024, 2025-2030 ($ Millions) & (K Units)

Global High Power GaN Devices Market Segment Percentages, by Type, 2023 (%)

Transistors

Diodes

Global High Power GaN Devices Market, by Application, 2019-2024, 2025-2030 ($ Millions) & (K Units)

Global High Power GaN Devices Market Segment Percentages, by Application, 2023 (%)

Radar

Satellite

Base Station

Inverter

Power Switch

Others

Global High Power GaN Devices Market, By Region and Country, 2019-2024, 2025-2030 ($ Millions) & (K Units)

Global High Power GaN Devices Market Segment Percentages, By Region and Country, 2023 (%)

North America

US

Canada

Mexico

Europe

Germany

France

U.K.

Italy

Russia

Nordic Countries

Benelux

Rest of Europe

Asia

China

Japan

South Korea

Southeast Asia

India

Rest of Asia

South America

Brazil

Argentina

Rest of South America

Middle East & Africa

Turkey

Israel

Saudi Arabia

UAE

Rest of Middle East & Africa

Competitor Analysis

The report also provides analysis of leading market participants including:

Key companies High Power GaN Devices revenues in global market, 2019-2024 (Estimated), ($ millions)

Key companies High Power GaN Devices revenues share in global market, 2023 (%)

Key companies High Power GaN Devices sales in global market, 2019-2024 (Estimated), (K Units)

Key companies High Power GaN Devices sales share in global market, 2023 (%)

Further, the report presents profiles of competitors in the market, key players include:

Infineon

Texas Instruments

Integra Technologies

Qorvo

Wolfspeed

Efficient Power Conversion

GaN Systems

Nexperia

STMicroelectronics

GOHM

Navitas

Power Integrations

Transphorm

Panasonic

GaNPower

Toshiba

Mitsubishi Electric

Outline of Major Chapters:

Chapter 1: Introduces the definition of High Power GaN Devices, market overview.

Chapter 2: Global High Power GaN Devices market size in revenue and volume.

Chapter 3: Detailed analysis of High Power GaN Devices manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.

Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.

Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.

Chapter 6: Sales of High Power GaN Devices in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.

Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.

Chapter 8: Global High Power GaN Devices capacity by region & country.

Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.

Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.

Chapter 11: The main points and conclusions of the report.