SiC Substrates Market

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.

SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.

Alpha silicon carbide (-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.

For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices

As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.

SiC Substrates Market contains market size and forecasts of SiC Substrates in global, including the following market information:

• Global SiC Substrates Market Revenue, 2017-2022, 2023-2028, ($ millions)
• Global SiC Substrates Market Sales, 2017-2022, 2023-2028, (K Pcs)
• Global top five SiC Substrates companies in 2021 (%)

The global SiC Substrates market was valued at million in 2021 and is projected to reach US$ million by 2028, at a CAGR of % during the forecast period.

The U.S. Market is Estimated at $ Million in 2021, While China is Forecast to Reach $ Million by 2028.

4 inch SiC Substrates Segment to Reach $ Million by 2028, with a % CAGR in next six years.

The global key manufacturers of SiC Substrates include Cree (Wolfspeed), II-VI Advanced Materials, TankeBlue Semiconductor, SICC Materials, Beijing Cengol Semiconductor, Showa Denko (NSSMC), Hebei Synlight Crystal, Norstel and ROHM and etc. In 2021, the global top five players have a share approximately % in terms of revenue.

We surveyed the SiC Substrates manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Total Market by Segment:

Global SiC Substrates Market, by Type, 2017-2022, 2023-2028 ($ Millions) & (K Pcs)

Global SiC Substrates Market Segment Percentages, by Type, 2021 (%)

• 4 inch SiC Substrates
• 6 inch SiC Substrates

Global SiC Substrates Market, by Application, 2017-2022, 2023-2028 ($ Millions) & (K Pcs)

Global SiC Substrates Market Segment Percentages, by Application, 2021 (%)

• Power component
• RF device
• Others

Global SiC Substrates Market, By Region and Country, 2017-2022, 2023-2028 ($ Millions) & (K Pcs)

Global SiC Substrates Market Segment Percentages, By Region and Country, 2021 (%)

• North America
• US
• Canada
• Mexico
• Europe
• Germany
• France
• U.K.
• Italy
• Russia
• Nordic Countries
• Benelux
• Rest of Europe
• Asia
• China
• Japan
• South Korea
• Southeast Asia
• India
• Rest of Asia
• South America
• Brazil
• Argentina
• Rest of South America
• Middle East & Africa
• Turkey
• Israel
• Saudi Arabia
• UAE
• Rest of Middle East & Africa
• Competitor Analysis

The report also provides analysis of leading market participants including:

• Key companies SiC Substrates revenues in global market, 2017-2022 (Estimated), ($ millions)
• Key companies SiC Substrates revenues share in global market, 2021 (%)
• Key companies SiC Substrates sales in global market, 2017-2022 (Estimated), (K Pcs)
• Key companies SiC Substrates sales share in global market, 2021 (%)

Further, the report presents profiles of competitors in the market, key players include:

• Cree (Wolfspeed)
• II-VI Advanced Materials
• TankeBlue Semiconductor
• SICC Materials
• Beijing Cengol Semiconductor
• Showa Denko (NSSMC)
• Hebei Synlight Crystal
• Norstel
• ROHM
• SK Siltron